| PART |
Description |
Maker |
| PLL103-03 PLL103-03XC PLL103-03XI PLL103-03XM |
DDR SDRAM Buffer with 4 DDR or 3 SDR/2 DDR DIMMS
|
PhaseLink Corporation
|
| K4H560838F-TC/LA2 K4H560838F-TC/LB3 K4H561638F-TC/ |
256Mb F-die DDR SDRAM Specification 256Mb的的F - DDR SDRAM内存芯片规格
10-Bit, 38 kSPS ADC Serial Out, On-Chip System Clock, Single Ch. 8-PDIP
10-Bit, 38 kSPS ADC Serial Out, On-Chip System Clock, 11 Ch. 20-PLCC -40 to 125
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| HY5DU56822AF HY5DU56422AF-J HY5DU561622AF HY5DU564 |
32M X 8 DDR DRAM, 0.7 ns, PBGA60
DDR SDRAM - 256Mb
64Mx4|2.5V|8K|J/M/K/H/L|DDR SDRAM - 256M
16Mx16|2.5V|8K|J/M/K/H/L|DDR SDRAM - 256M
|
HYNIX SEMICONDUCTOR INC
|
| HYMD532M646A6-H HYMD532M646A6-J HYMD532M646A6-K HY |
DDR SDRAM - SO DIMM 256MB
32M X 64 DDR DRAM MODULE, 0.7 ns, ZMA200
Unbuffered DDR SO-DIMM
|
HYNIX SEMICONDUCTOR INC
|
| ICS32852 ICSSSTV32852 ICSSSTV32852YHT STV32852YHLF |
SSTV SERIES, POSITIVE EDGE TRIGGERED D FLIP-FLOP, TRUE OUTPUT, PBGA114
DDR 24-Bit to 48-Bit Registered Buffer
|
INTEGRATED DEVICE TECHNOLOGY INC
Integrated Circuit Systems
|
| ICS16859 ICSSSTV16859YG-T ICSSSTV16859YGLF-T |
SSTV SERIES, POSITIVE EDGE TRIGGERED D FLIP-FLOP, TRUE OUTPUT, PDSO64 6.10 MM, 0.50 MM PITCH, TSSOP-64
DDR 13-Bit to 26-Bit Registered Buffer
|
Integrated Device Technology, Inc.
Integrated Circuit Systems
|
| IDT72T2098L7BBI IDT72T20118L7BB IDT72T20108L7BBI I |
2.5 VOLT HIGH-SPEED TeraSync DDR/SDR FIFO 20-BIT/10-BIT CONFIGURATION
2.5 VOLT HIGH-SPEED TeraSync?/a> DDR/SDR FIFO 20-BIT/10-BIT CONFIGURATION
|
Integrated Device Technology
|
| ICS83841BHT ICS83841 ICS83841BH ICS83841BHLF ICS83 |
20 BIT, DDR SDRAM 2:1 MUX
|
Integrated Circuit Syst...
ICST[Integrated Circuit Systems]
|
| ICS16857C ICSSSTV16857CG-T |
DDR 14-Bit Registered Buffer
|
Integrated Circuit Systems
|
| CBTV4020 CBTV4020EE CBTV4020EG |
20-bit DDR SDRAM 2 : 1 MUX
|
NXP Semiconductors
|
| SLGSSTVF16859H |
DDR 13 to 26 Bit Registered Buffer
|
Silego
|
